BU2508DF general description product specification absolute maximum ratings enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. silicon diffused power transistor parameter symbol value unit collector-base voltage v cbo 1500 v collector-emitter volta ge v ceo 700 v emitter-base voltage v ebo 6 v collector current i c 8 .0 a base current i b 3 .5 a total dissipation at p tot 45 w max. operating junction temperature t j 150 o c storage temperature t stg -65~150 o c parameter symbol test conditions min. typ. max. unit collector cut-off current i ces v cb =1500v, i e =0 1.0 ma emitter cut-off current i ebo v eb =7.5v, i c =0 227 ma collector-emitter sustaining voltage v ceo i c =100ma, i b =0 700 v dc current gain h fe(1) v ce =5.0v, i c =1.0a 13 h fe(2) v ce =1.0v, i c =4.5a 4 10 collector-emitter saturation voltage v ce(sat) i c =4.5a,i b =1.12a 1.0 v base-emitter saturation voltage v be(sat) i c =4.5a,i b =1.7a 1.1 v diode forward voltage v f i f =4.5a 1.6 2 .0 v electrical characteristics (tcase = 25 unless otherwise specified) top-3fa tiger electronic co.,ltd
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